AlGaN/GaN Heterostructure Transit-Time Devices: A Novel Device Concept for Submillimeter-Wave Sources
نویسندگان
چکیده
A novel transit-time device structure for lownoise RF power generation at high millimeter-wave and submillimeter-wave frequencies is proposed. It takes advantage of the unique tunneling properties in strained AlGaN/GaN heterojunctions. The device simulations take realistic heat management for continuous-wave operation on diamond heat sinks into account and, as initial results, predict tunability over a large frequency range and RF power levels (and corresponding dc-to-RF conversion efficiencies) of > 240 mW (> 5%) around 160 GHz and > 15 mW (> 2%) around 320 GHz.
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